A key requirement in achieving successful submicron fabrication processes is the control of the thermal budget. This has created a considerable interest in transient methods of thermal processing, which minimize the negative influence of high-temperature processes on semiconductor crystals. In brief, transient heating derived from rapid thermal processing can promise a lot of advantages. The emergence of this important processing technique has led to a rapid growth of research activities in this area involving all types of processes. The objective of this research is to design and develop a laboratory scale furnace system. Experiments conducted through deposition and doping processes on silicon wafers using the constructed system have revealed the superiority and advantages of the system over the conventional ones, in particular, the shorter time scales (measured in seconds), the reasonably low temperatures and the sheet resistivities produced. This type of system would open a vast scope of research at the laboratories without the huge investment on the commercial rapid thermal system.